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MEMS sensor generations

From Wikipedia, the free encyclopedia

MEMS sensor generations represent the progress made in micro sensor technology and can be categorized as follows:

1st Generation
MEMS sensor element mostly based on a silicon structure, sometimes combined with analog amplification on a micro chip.[1]
2nd Generation
MEMS sensor element combined with analog amplification and analog-to-digital converter on one micro chip.
3rd Generation
Fusion of the sensor element with analog amplification, analog-to-digital converter and digital intelligence for linearization and temperature compensation on the same micro chip.
4th Generation
Memory cells for calibration- and temperature compensation data are added to the elements of the 3rd MEMS sensor generation.

References

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  1. ^ Terry, S.C.; Jerman, J.H.; Angell, J.B. (December 1979). "A gas chromatographic air analyzer fabricated on a silicon wafer". IEEE Transactions on Electron Devices. 26 (12): 1880–1886. doi:10.1109/T-ED.1979.19791.